NTMFS4821NT3G【PDF 2/7 页】MOSFET N-CH 30V 8.8A SO-8FL

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NTMFS4821N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Junction ? to ? Case (Drain)

Junction ? to ? Ambient – Steady State (Note 1)

Junction ? to ? Ambient – Steady State (Note 2)

Junction ? to ? Ambient ? t v 10 sec

Symbol

R q JC

R q JA

R q JA

R q JA

Value

3.25

58.3

144.1

22.3

Unit

° C/W

1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.

2. Surface ? mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain ? to ? Source Breakdown Voltage

Drain ? to ? Source Breakdown Voltage

Temperature Coefficient

V (BR)DSS

V (BR)DSS /

T J

V GS = 0 V, I D = 250 m A

30

25

V

mV/ ° C

Zero Gate Voltage Drain Current

I DSS

V GS = 0 V,

V DS = 24 V

T J = 25 ° C

T J = 125 ° C

1

10

m A

Gate ? to ? Source Leakage Current

I GSS

V DS = 0 V, V GS = ± 20 V

± 100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V GS(TH)

V GS = V DS , I D = 250 m A

1.45

1.8

2.5

V

Negative Threshold Temperature Coefficient

V GS(TH) /T J

mV/ ° C

Drain ? to ? Source On Resistance

R DS(on)

V GS = 10 V to

11.5 V

V GS = 4.5 V

I D = 30 A

I D = 15 A

I D = 30 A

5.3

5.2

8.6

6.95

10.8

m W

I D = 15 A

8.4

Forward Transconductance

g FS

V DS = 1.5 V, I D = 30 A

54

S

CHARGES AND CAPACITANCES

Input Capacitance

C ISS

1400

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Threshold Gate Charge

Gate ? to ? Source Charge

Gate ? to ? Drain Charge

Total Gate Charge

C OSS

C RSS

Q G(TOT)

Q G(TH)

Q GS

Q GD

Q G(TOT)

V GS = 0 V, f = 1 MHz, V DS = 12 V

V GS = 4.5 V, V DS = 15 V; I D = 30 A

V GS = 11.5 V, V DS = 15 V,

I D = 30 A

282

136

10.7

1.4

4.1

3.8

25

16

pF

nC

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn ? On Delay Time

t d(ON)

13.3

Rise Time

Turn ? Off Delay Time

Fall Time

t r

t d(OFF)

t f

V GS = 4.5 V, V DS = 15 V, I D = 15 A,

R G = 3.0 W

38

16.6

3.8

ns

3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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